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  PTZ series diodes zener diode PTZ series ! ! ! ! applications 1) voltage regulation and voltage limiting. 2) voltage surge absorption. ! ! ! ! features 1) small surface mounting type. (pmds) 2) 1w of power can be obtained despite compact size. 3) high surge withstand level. ! ! ! ! construction silicon epitaxial planar ! ! ! ! external dimensions (units : mm) 0.1 cathode mark 4.50.2 2.60.2 2.00.2 1.20.3 0 0.1 1.50.2 5.00.3 + 0.02 ? 0.1 model name (voltage rank) date of manufacture ex. 1999.12 9.c eiaj : ? jedec : sod-106 rohm : pmds ! ! ! ! absolute maximum ratings (ta=25 c) parameter symbol limits unit p tj 150 c tstg c w 1 ? 55~ + 150 power dissipation ? junction temperature storage temperature ? mounting density of other power components should be taken into consideration when laying out the pattern. ! ! ! ! marking (voltage rank) 3.6b 9c (ex.) PTZ3.6b year of manufacture: last digit of western calendar month of manufacture symbol 1 2 3 456789oac jan. feb. mar. apr. may jun. jul. aug. sep. oct. nov. dec. month zener voltage category 1999 dec. ex.) PTZ3.6b type no. type no. type no. 3.6 b 8.2 b 20 b 3.9 b 9.1 b 22 b 4.3 b 10 b 24 b 4.7 b 11 b 27 b 5.1 b 12 b PTZ3.6b PTZ3.9b PTZ4.3b PTZ4.7b PTZ5.1b PTZ8.2b PTZ9.1b PTZ10b PTZ11b PTZ12b PTZ20b PTZ22b PTZ24b PTZ27b 30 b PTZ30b 5.6 b 13 b 33 b 6.2 b b 36 b 6.8 b 16 b 7.5 b 18 b PTZ5.6b PTZ6.2b PTZ6.8b PTZ7.5b PTZ13b PTZ15b PTZ16b PTZ18b PTZ33b PTZ36b ? ? ? ? 15
PTZ series diodes ! ! ! ! electrical characteristics (ta=25 c) zener voltage subdivision operating resistance reverse current PTZ 3.6b 15 1.0 3.600 4.000 PTZ 3.9b 15 1.0 3.900 4.400 PTZ 4.3b 15 1.0 4.300 4.800 PTZ 4.7b 10 1.0 4.700 5.200 PTZ 5.1b 8 1.0 5.100 5.700 PTZ 5.6b 8 1.5 5.600 6.300 type v z ( v) z z ( ? ) i r ( a) min. max. i z (ma) max. i z (ma) max. v r (v) 40 40 20 40 40 20 40 40 20 40 40 20 40 40 20 40 40 20 PTZ 24b 10 16 10 10 19.0 24.000 27.600 PTZ 27b 10 16 10 10 21.0 27.000 30.800 PTZ 30b 10 18 10 10 23.0 30.000 34.000 PTZ 33b 10 18 10 10 25.0 33.000 37.000 PTZ 36b 10 20 10 10 27.0 36.000 40.000 PTZ 13b 20 10 20 10 10.0 13.300 15.000 PTZ 15b 20 10 20 10 11.0 14.700 16.500 PTZ 16b 20 12 20 10 12.0 16.200 18.300 PTZ 18b 20 12 20 10 13.0 18.000 20.300 PTZ 20b 20 14 20 10 15.0 20.000 22.400 PTZ 22b 10 14 10 10 17.0 22.000 24.500 PTZ 8.2b 40 4 40 20 5.0 8.200 9.300 PTZ 9.1b 40 6 40 20 6.0 9.100 10.200 PTZ 10b 40 6 40 10 7.0 10.000 11.200 PTZ 11b 20 8 20 10 8.0 11.000 12.300 PTZ 12b 20 8 20 10 9.0 12.000 13.500 PTZ 6.8b 40 6 40 20 3.5 6.800 7.700 PTZ 7.5b 40 4 40 20 4.0 7.500 8.400 PTZ 6.2b 40 6 40 20 3.0 6.200 7.000 notes) 1. the zener voltage is measured 40ms after power is supplied. 2. the operating resistances (z z , z zk ) are measured by superimposing a minute alternating current on the regulated current (i z ).
PTZ series diodes ! ! ! ! electrical characteristic curves (ta=25 c) 0 0 glass epoxy substrate 32 30 1.6 (mm) 82 30 1.0 (mm) 1200 1000 800 600 400 200 25 50 87.5 100 150 200 power dissipation : pd (mn) ambient temperature : ta ( c) ceramic substrate individual part (not mounted) fig.1 derating curve 0 114 124 1.6 (units : mm) 1.5w 1.0w 0.5w 200 100 1 10 100 a 15mm mounting quantity (pcs/substrate) fig.2 rise in surface temperature alumina substrate rise in diode a surface temperature ( c) mounting position 10mm 0 200 100 1 10 100 a 15mm 1.5w 1.0w 0.5w 144 220 1.6 (units : mm) glass epoxy substrate rise in diode a surface temperature ( c) mounting quantity (pcs/substrate) mounting position 10mm fig.3 rise in surface temperature 3.6 3.9 4.3 4.7 5.1 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 7.5 6.8 6.2 5.6 0 1 10 100 1m 10m 100m 5 10152025303540 zener current : i z (a) fig.4 zener voltage characteristics zener voltage : v z ( v) ? 0.08 ? 0.06 ? 0.04 ? 0.02 0.00 0.02 0.04 0.06 0.08 0.10 125-25 c iz=20ma iz=40ma 010203040 temp. coefficient characteristics (% / c) fig.5 zener voltage - temp.coefficient characteristics zener voltage : vz (v)


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